Datasheet Summary
Transistors
Silicon PNP epitaxial planar type
Unit: mm
For power amplification
- Features
- Low collector-emitter saturation voltage VCE(sat)
- Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.5±0.1 1.6±0.2 1.5±0.1
4.0+0.25
- 0.20
2.5±0.1 3˚
0.4±0.04
0.4±0.08 1.5±0.1 3˚
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
- Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating
- 60
- 60
- 6
- 2
- 4 1 150
- 55 to...