Datasheet Summary
Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
..net
Silicon PNP epitaxial planar type
For power amplification plementary to 2SD1252, 2SD1252A
8.5±0.2
Unit: mm
3.4±0.3 1.0±0.1 6.0±0.2
10.0±0.3 1.5±0.1
- Features
- High forward current transfer ratio hFE which has satisfactory linearity
- Low collector-emitter saturation voltage VCE(sat)
- N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating
- 60
- 80
- 60
- 80
- 5
- 3
- 5 35 1.3 150
- 55 to +150
Unit V
1...
