Datasheet Summary
Power Transistors
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification plementary to 2SA0900
φ 3.16±0.1
8.0+- 00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
- Features
3.05±0.1
- Low collector-emitter saturation voltage VCE(sat)
- Satisfactory operation performances and high efficiency with a lowvoltage power supply
- TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
1.9±0.1 16.0±1.0
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