Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
15.0±0.3
5.0±0.2
(0.7)
- Features
11.0±0.2
(3.2)
- High-speed switching
21.0±0.5 15.0±0.2
- High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
- Satisfactory linearity of forward current transfer ratio hFE
- Full-pack package which can be installed to the heat sink with one screw
2.0±0.2
2.0±0.1
-...
