Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
- Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
21.0±0.5 15.0±0.2
- High-speed switching
- High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
- Wide safe operation area
- Satisfactory linearity of forward current transfer ratio hFE
- Full-pack package which can be installed to the heat sink with one screw
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
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