Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2
- 0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 1400 1400 700 5 1.0 0.3 20 2 150
- 55 to +150 Unit V V V V A A W ˚C ˚C
16.7±0.3 14.0±0.5
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak...