Datasheet Summary
Transistors
Silicon NPN epitaxial planar type
For low-frequency output amplification plementary to 2SA1890
4.5±0.1 1.6±0.2
Unit: mm
1.5±0.1
- Features
2.5±0.1 3˚
4.0- +00..2205
- Low collector-emitter saturation voltage VCE(sat)
- High collector-emitter voltage (Base open) VCEO
- Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing
1 0.4±0.08
1.5±0.1
23 0.5±0.08
3˚
1.0- +00..21
0.4±0.04
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