Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
6.5±0.1 5.3±0.1 4.35±0.1
Unit: mm
2.3±0.1 0.5±0.1
7.3±0.1 1.8±0.1 s Features
0.8max 1.0±0.2
1.0±0.1
2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO)
0.93±0.1
0.1±0.05 0.5±0.1
2.3±0.1 4.6±0.1
0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE
/ s...
