Datasheet Summary
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1 s Features q q
10.5min.
Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 8 6 4 1 30 1.3 150
- 55 to +150 Unit V
10.0±0.3
1.5max.
1.1max.
0.8±0.1
0.5max. s...
