Datasheet Summary
Power Transistors
2SD1257, 2SD1257A
Silicon NPN epitaxial planar type
For power switching plementary to 2SB934
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1 s Features q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 150 80 100 7 15 7 40 1.3 150
- 55 to +150 Unit V
1.5±0.1
1.5max.
1.1max.
10.5min.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3 s...
