Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For power amplification plementary to 2SB1052
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2
- 0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s q q q
Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60 60 6 4 2 25 2 150
- 55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3 14.0±0.5
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector...
