Datasheet Summary
Power Transistors
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching plementary to 2SB1156
21.0±0.5
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
- Features
- Low collector-emitter saturation voltage VCE(sat)
- Satisfactory linearity of forward current transfer ratio hFE
- Large collector current IC
- Full-pack package which can be installed to the heat sink with one screw
φ 3.2±0.1
15.0±0.2 (3.5) Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
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