Datasheet Summary
Power F-MOS FETs
Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2 s Applications
16.7±0.3
7.5±0.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification
φ3.1±0.1 s...
