Datasheet Summary
Power F-MOS FETs
Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage
6.5±0.1 5.3±0.1 4.35±0.1 unit: mm
2.3±0.1 0.5±0.1 s Applications q High-speed switching (switching power supply) q For high-frequency power amplification
7.3±0.1
1.8±0.1
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1 s...