Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability
4.5±0.3
2.8 1.8 1.0
4.8±0.3 2.4 2.4
12.8 min. 10.0 min.
2-0.98±0.2 2-0.45±0.15...