Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 3.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package
3.9±0.3 Not soldered
ø2.4 4.5±0.3 1.2
2.9±0.25 0.9 1.7±0.2 0.8
12.8 min.
2.4 1.5
2-1.2±0.3
2-0.45±0.15 1 2.54 R1.2 2...