MIP501 Datasheet | Panasonic

Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501 , MIP502 Silicon MOS IC s Features q 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 0.8C 0.8C Direct drive possible by the logic circuit s Applications q Lamp drive 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 0.4±0.1 2.05±0.2 s...