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PE29100 - High-speed FET Driver

General Description

L enhancement mode gallium nitride (eGaN®) FETs.

Key Features

  • High- and Low-side FET drivers.
  • Dead-time control.
  • Fast propagation delay, 8 ns.
  • Tri-state enable mode E.
  • Sub-nanosecond rise and fall time.
  • 2A/4A peak source/sink current.
  • Package.
  • Flip chip.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE29100 Document Category: Product Specification UltraCMOS® High-speed FET Driver, 33 MHz Features • High- and Low-side FET drivers • Dead-time control • Fast propagation delay, 8 ns • Tri-state enable mode E • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – Flip chip Applications • DC–DC conversions • AC–DC conversions • Wireless power • Class D amplifiers IF Product Description The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as L enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz.