PE29100 Datasheet | pSemi

eatures - High- and Low-side FET drivers - Dead-time control - Fast propagation delay, 8 ns - Tri-state enable mode - Sub-nanosecond rise and fall time - 2A/4A peak source/sink current - Package - Flip chip Applications - DC- DC conversions - AC- DC conversions - Wireless power - Class D amplifiers IF Product Description The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as L enhancement mode gallium nitride (e Ga N®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral ponents and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip chip package. The PE29100 is manufactured on Peregrine’s Ultra CMOS process, a patented advanced form of silicon-oninsulator (SOI) technology, offering the performance of Ga As with the economy and integration of conventional F CMOS. O Figure 1 - PE29100 Functional Diagram RDTL ENRDTH UVLO Dead Time Controller Logic Level Shifter Level Shifter GND LSO Output Driver Output...