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PE29100
Document Category: Product Specification
UltraCMOS® High-speed FET Driver, 33 MHz
Features
• High- and Low-side FET drivers • Dead-time control • Fast propagation delay, 8 ns • Tri-state enable mode
E • Sub-nanosecond rise and fall time
• 2A/4A peak source/sink current • Package – Flip chip
Applications
• DC–DC conversions • AC–DC conversions • Wireless power • Class D amplifiers
IF Product Description
The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as
L enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing
switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz.
PE29100 Datasheet
