PE29100 Description
The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as L enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral ponents and enable new applications like the Rezence...
PE29100 Key Features
- High- and Low-side FET drivers
- Dead-time control
- Fast propagation delay, 8 ns
- Tri-state enable mode
- Sub-nanosecond rise and fall time
- 2A/4A peak source/sink current
- Package
- Flip chip