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PE4239 - SPDT UltraCMOS RF Switch

General Description

The PE4239 UltraCMOS® RF switch is designed to cover a broad range of applications from DC through 3.0 GHz.

Key Features

  •  Single-pin or complementary CMOS logic control inputs.
  •  +3.0V power supply needed for single- pin control mode.
  •  Low insertion loss: 0.7 dB at 1.0 GHz, 0.9 dB at 2.0 GHz.
  •  Isolation of 32 dB at 1.0 GHz, 23 dB at 2.0 GHz.
  •  Typical input 1 dB compression point of +25 dBm.
  •  Ultra-small 6-lead SC-70 package Figure 2. Package Type SC-70 6-lead SC-70 CMOS Control Driver CTRL CTRL or VDD Table 1. Electrical Specifications @ +25 °C, VDD = 3V (ZS = ZL = 50Ω) Parameter.

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Product Description The PE4239 UltraCMOS® RF switch is designed to cover a broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board...

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ns from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. Using a nominal +3V power supply voltage, a typical input 1 dB compression point of +25 dBm can be achieved. The PE4239 UltraCMOS RF switch is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the Figure 1. Functional Diagram RFC RF1 RF2 Product Specification PE4239 SPDT UltraCMOS® RF Switch Features  Single-pin or

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