PE42430
Key Features
- HaRP™-enhanced UltraCMOS® device
- Low insertion loss
- Typical 0.45 dB @ 1 GHz
- Typical 0.55 dB @ 2.5 GHz
- IIP3: Typical +66 dBm
- P0.1dB Compression: Typical +30 dBm
- Excellent ESD tolerance of 4500V HBM and 250V MM on all ports
- No external VDD required. VDD is derived from switch control inputs
- Package type: 8-lead 1.5 x 1.5 mm DFN Figure
- Functional Diagram RFC ESD RF1 ESD RF2 ESD RF3 ESD CMOS Control/Driver and ESD V1 V2 V3
