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PE42540 - UltraCMOS SP4T RF Switch

Datasheet Summary

Description

The PE42540 is a HaRP™ technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology.

This switch is designed specifically to support the requirements of the test equipment and ATE market.

It comprises four symmetric RF ports and has very high isolation.

Features

  •  HaRP™ technology enhanced.
  •  Fast settling time.
  •  Eliminates gate and phase lag.
  •  No drift in insertion loss and phase.
  •  High linearity: 58 dBm IIP3.
  •  Low insertion loss: 0.8 dB @ 3 GHz, 1.0 dB @ 6 GHz and 1.2 dB @ 8 GHz.
  •  High isolation: 45 dB @ 3 GHz, 39 dB @ 6 GHz and 31 dB @ 8 GHz.
  •  Maximum power handling: 30 dBm @ 8 GHz.
  •  High ESD tolerance of 2 kV HBM on RFC and 1 kV HBM on all other pins Figure 2. Package Type 32-lead 5 × 5 mm LGA RF1 ESD 50.

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Datasheet preview – PE42540

Datasheet Details

Part number PE42540
Manufacturer Peregrine Semiconductor
File Size 874.39 KB
Description UltraCMOS SP4T RF Switch
Datasheet download datasheet PE42540 Datasheet
Additional preview pages of the PE42540 datasheet.

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Full PDF Text Transcription

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Product Description The PE42540 is a HaRP™ technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and ATE market. It comprises four symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a two-pin low voltage CMOS control interface and an optional external VSS feature. High ESD tolerance and no blocking capacitor requirements make this the ultimate in integration and ruggedness. The PE42540 is manufactured on PSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1.
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