PE43503
Key Features
- HaRP™-enhanced UltraCMOS™ device
- Attenuation: 1 dB steps to 31 dB
- High Linearity: Typical +58 dBm IP3
- Excellent low-frequency performance
- 3.3 V or 5.0 V Power Supply Voltage
- Fast switch settling time
- Programming Modes
- Direct Parallel
- Latched Parallel
- High-attenuation state @ power-up (PUP)
