PE64909 Overview
Key Features
- 3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
- DuNE™ technology enhanced
- 4-bit 16-state Digitally Tunable Capacitor
- Shunt configuration C = 0.6 pF to 2.35 pF (3.9:1 tuning ratio) in discrete 117 fF steps
- High RF power handling (30 Vpk RF) and linearity
- Wide power supply range (2.3 to 4.8V) and low current consumption (typ. 140 μA at 2.75V)
- High ESD tolerance of 2kV HBM on all pins
