Datasheet4U Logo Datasheet4U.com

PE84244 - SPDT MOSFET RF SWITCH

General Description

The PE84244 MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz.

This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input.

Using a +3-volt nominal power supply voltage, a 1 dB compression point of +27 dBm can be achieved.

Key Features

  • Single +3.0-volt Power Supply.
  • Low Insertion loss: 0.70 dB up to 2.0 GHz.
  • High isolation of 39 dB at 1.0 GHz, 28 dB at 2.0 GHz, typical.
  • Typical 1 dB compression of +27 dBm.
  • Single-pin CMOS logic control.
  • Packaged in 8-lead MSOP Figure 2. Package Type RF1 CTRL RF2 8-lead MSOP Table 1. Electrical Specifications -55 °C to +125 °C, VDD = 3 V (ZS = ZL = 50 Ω) Parameter Operation Frequency Insertion Loss Isolation.
  • RFCommon to RF1/R.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE8425DM N-Channel Enhancement Mode Power MOSFET Semione
PE8460K N-Channel Enhancement Mode Power MOSFET ChipSourceTek
PE848DU Dual N-Channel Field Effect Transistor NIKO-SEM
PE8050 NPN-PNP General Purpose Complementary Amplifiers & Output Drivers Fairchild Semiconductor
PE80H11 N-Channel Enhancement Mode Power MOSFET semi one

Other Datasheets by pSemi (Peregrine Semiconductor)

Part Number Description
PE84140 Ultra-High Linearity UltraCMOS
PE83336 3.0 GHz Integer-N PLL
PE83501 3.5 GHz Low Power CMOS
PE83502 3.5 GHz Low Power CMOS
PE83503 3.5 GHz Low Power UltraCMOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY SPECIFICATION PE84244 Military Operating Temperature Range Product Description The PE84244 MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input. Using a +3-volt nominal power supply voltage, a 1 dB compression point of +27 dBm can be achieved. The PE84244 also exhibits excellent isolation of 28 dB at 2.0 GHz and is offered in a small 8-lead MSOP package. The PE4244 MOSFET RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Schematic Diagram RFCommon SPDT MOSFET RF Switch Features • Single +3.