C30619 Datasheet | PerkinElmer Optoelectronics

Description The Perkin Elmer family of large-area In Ga As PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrumentation. All devices are planar passivated and feature low capacitance for extended bandwidth, and high shunt resistance for maximum sensitivity. Typical devices feature <1% non-linearity to optical powers >+13 d Bm (20 m W), and uniformity within ±2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large-area In Ga As devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850, 1300, and 1550 nm. Devices are available with active areas from 0.5 mm to 3.0 mm in TO-type packages or on thermoelectric coolers for increased sensitivity (see below). Photodiodes can also be mounted on customized ceramic sub-mounts to suit specific application requirements. Perkin Elmer Optoelectronics Canada is qualified to ISO-9001 and operates to MIL-Q9858A and AQAP-1 quality standards. All devices undergo extended life-test and periodic process qualification programs to assure high reliability. In addition, all production devices are sourced from a qualified wafer, screened with a 16 hour, 200°C burn-in at -10V bias (C30619 and C30641) or -5V (C30642 and C30665), and tested to meet responsivity, spectral noise, capacitance, shunt resistance and dark current specifications. Large-Area In Ga As Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A NEW LIGHT. Features - 0.5, 1.0, 2.0, and 3.0 mm diameters - High responsivity from 850 nm to 1550 nm - High shunt resistance, low dark current - TE-cooled package options - Low capacitance for fast response times Applications - Power meters - Fiber identifiers - Laser burn-in racks - Near infrared instrumentation - F .T.I.R. spectroscopy .. .. .. C30619, C30641, C30642, C30665 Package...