DESCRIPTION
All devices are planar passivated and feature low capacitance for extended bandwidth, and high shunt resistance for maximum sensitivity. Typical devices feature <1% non-linearity to optical powers >+13 dBm (20 mW), and uniformity within ±2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large-area InGaAs devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850, 1300, and 1550 nm. Devices are available with active areas from 0.5 mm to 3.0 mm in TO-type packages or on thermoelectric coolers for increased sensitivity (see below). Photodiodes can also be mounted on customized ceramic sub-mounts to suit specific application requirements. PerkinElmer Optoelectronics Canada is qualified to ISO-9001 and operates to MIL-Q9858A and AQAP-1 quality standards. All devices undergo extended life-test and periodic process qualification programs to assure high reliability. In addition, all production devices a...
PerkinElmer Optoelectronics
