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C30921E Datasheet (c309xxx) Silicon Avalanche Photodiodes

Manufacturer: PerkinElmer Optoelectronics

Overview: Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number C30921E
Manufacturer PerkinElmer Optoelectronics
File Size 232.32 KB
Description (C309xxx) Silicon Avalanche Photodiodes
Datasheet C30921E C30902E Datasheet (PDF)

General Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz.

Key Features

  • High Quantum Efficiency 77% Typical at 830 nm.
  • C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second.
  • Hermetically Sealed Package.
  • Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2.
  • High Responsivity - Internal Avalanche Gains in Excess o.

C30921E Distributor