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C30921E - (C309xxx) Silicon Avalanche Photodiodes

This page provides the datasheet information for the C30921E, a member of the C30902E (C309xxx) Silicon Avalanche Photodiodes family.

Product Overview

PerkinElmer Optoelectronics

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C30921E (C309xxx) Silicon Avalanche Photodiodes by PerkinElmer Optoelectronics - Datasheet Preview — Datasheet preview – C30921E

Datasheet Details

Part number	C30921E
Manufacturer	PerkinElmer Optoelectronics
File Size	232.32 KB
Description	(C309xxx) Silicon Avalanche Photodiodes
Datasheet	C30921E Datasheet
Additional preview pages of the C30921E datasheet.

C30921E Product details

Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

Features

High Quantum Efficiency 77% Typical at 830 nm.
C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second.
Hermetically Sealed Package.
Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2.
High Responsivity - Internal Avalanche Gains in Excess o.

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Other Datasheets by PerkinElmer Optoelectronics

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Published: Jan 22, 2006 |