Datasheet4U Logo Datasheet4U.com

C30921EH Datasheet Silicon Avalanche Photodiodes

Manufacturer: PerkinElmer Optoelectronics

Overview: DATASHEET SENSOR SOLUTIONS Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO-18 package. The useful diameter of the photosensitive surface is 0.5 mm. PerkinElmer’s C30921EH is packaged in a lightpipe TO-18 which allows efficient coupling of light to the detector from either a focused spot or an optical fiber up to 0.25 mm in diameter. The hermetically-sealed TO-18 package allows fibers to be epoxied to the end of the lightpipe to minimize signal losses without fear of endangering detector stability. The C30902SH and C30921SH are selected C30902EH and C30921EH photodiodes having extremely low noise and bulk dark-current. They are intended for ultra-low light level applications (optical power less than 1 pW) and can be used in either their normal linear mode (VR VBR) where a single photoelectron may trigger an avalanche pulse of about 108 carriers. In this mode, no amplifiers are necessary and single-photon detection probabilities of up to approximately 50% are possible. Photon-counting is also advantageous where gating and coincidence techniques are employed for signal retrieval.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number C30921EH
Manufacturer PerkinElmer Optoelectronics
File Size 175.76 KB
Description Silicon Avalanche Photodiodes
Datasheet C30921EH C30902 Datasheet (PDF)

Key Features

  • High quantum efficiency of 77% typical @ 830 nm.
  • C30902SH and C30921SH can be operated in “Geiger” mode.
  • Hermetically sealed package.
  • Low Noise at room temperature.
  • High responsivity.
  • internal avalanche gains in excess of 150.
  • Spectral response range.
  • (10% points) 400 to 1000 nm.
  • Time response.
  • typically 0.5 ns.
  • Wide operating temperature range - -40°C to +70°C.
  • RoHS-compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Excelitas Logo C30921EH High-speed solid state detectors Excelitas
Excelitas Logo C30921 High-speed solid state detectors Excelitas
Excelitas Logo C30921SH High-speed solid state detectors Excelitas

More Datasheets from PerkinElmer Optoelectronics

Part Number Description
C30921E (C309xxx) Silicon Avalanche Photodiodes
C30921S (C309xxx) Silicon Avalanche Photodiodes
C30921SH Silicon Avalanche Photodiodes
C3092SH-DTC Silicon Avalanche Photodiodes
C3092SH-TC Silicon Avalanche Photodiodes
C30902 Silicon Avalanche Photodiodes
C30902E (C309xxx) Silicon Avalanche Photodiodes
C30902EH Silicon Avalanche Photodiodes
C30902S (C309xxx) Silicon Avalanche Photodiodes
C30902SH Silicon Avalanche Photodiodes

C30921EH Distributor