DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD31AA SYMBOL ISC TC ISC VOC TC VOC ID CJ SR λrange λp VBR θ1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 5 ±60 TEST CONDITIONS Min. H = 5 mW/cm2, 2850 K 2850 K H = 5 mW/cm2, 2850 K 2850 K H = 0, VR = 15 V H = 0, V = 0 V @ Peak 400 860 .55 1150 150 .20 350 -2.0 50 500 Typ. Max. 225 µA %/°C mV mV/°C nA pF A/W nm nm V Degrees UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-395...
PerkinElmer Optoelectronics