DESCRIPTION
A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs. ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 mW 0.71 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages (91-92) Light Current lC mA Min. VTT1212 VTT1214 2.0 4.0 Max. — — H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ.
PerkinElmer Optoelectronics