VTT1212 - .040 NPN Phototransistors

PerkinElmer Optoelectronics

General Description

A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package.

These devices are spectrally and mechanically matched to the VTE12xx series of IREDs.

📥 Download Datasheet

VTT1212 .040 npn phototransistors by PerkinElmer Optoelectronics - Datasheet Preview

Datasheet Details

Part number	VTT1212
Manufacturer	PerkinElmer Optoelectronics
File Size	21.49 KB
Description	.040 NPN Phototransistors
Datasheet	VTT1212 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
VTT12	Definite Time Delay Relay	ALSTOM
VTT11	Definite Time Delay Relay	ALSTOM

Other Datasheets by PerkinElmer Optoelectronics

Part Number	Description
VTT1214	.040 NPN Phototransistors
VTT1222W	.025 NPN Phototransistors
VTT1223W	.025 NPN Phototransistors
VTT1225	.025 NPN Phototransistors
VTT1226	.025 NPN Phototransistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

.040" NPN Phototransistors Clear T-1¾ (5 mm) Plastic Package VTT1212, 1214 PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 mW 0.