DESCRIPTION
A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. These devices are spectrally matched to any of PerkinElmer IREDs. ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -20°C to 70°C -20°C to 70°C 100 mW 2.5 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current lC mA Min. VTT9002 VTT9003 2.0 5.0 Max. — — H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.55 0.55 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ. 4.0 6.0 Typ. ±50° ±50° Angular Response θ1/2 Part Number Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics