74HCT1G08 Datasheet | Philips Semiconductors

FEATURES - Wide operating voltage: 2.0 to 6.0 V - Symmetrical output impedance - High noise immunity - Low power dissipation - Balanced propagation delays - Very small 5 pins package - Output capability: standard. Notes DESCRIPTION The 74HC1G/HCT1G08 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G08 provides the 2-input AND function. The standard output currents are 1⁄2 pared to the 74HC/HCT08. FUNCTION TABLE See note 1. INPUTS in A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. in B L H L H OUTPUT out Y L L L H PINNING PIN 1 2 3 4 5 in B in A GND out Y VCC SYMBOL QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. 74HC1G08; 74HCT1G08 TYP. SYMBOL t PHL/t PLH CI CPD PARAMETER propagation delay in A, in B to out Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 p F; VCC = 5 V 7 1.5 19 HCT1G 11 1.5 21 ns p F p F UNIT 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in p F; VCC = supply voltage in V; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. DESCRIPTION data input B data input A ground (0 V) data output DC supply voltage 1998 Nov 10 Philips Semiconductors Product specification 2-input AND gate ORDERING AND PACKAGE INFORMATION PACKAGES OUTSIDE NORTH AMERICA 74HC1G08GW 74HCT1G08GW TEMPERATURE RANGE - 40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-88A MATERIAL plastic plastic 74HC1G08; 74HCT1G08 CODE SOT353 SOT353 MARKING HE TE handbook, halfpage in B 1 in A 2 GND 3 MNA112 5 VCC handbook, halfpage 1 2 in B in A 4 out Y out Y MNA113 Fig.1 Pin configuration. Fig.2 Logic symbol. handbook, halfpage 1 2 handbook, halfpage & in B 4 out Y MNA114 in A MNA115 Fig.3 IEC logic symbol. Fig.4 Logic...