Datasheet4U Logo Datasheet4U.com

74HCT2G00 - Dual 2-input NAND gate

Download the 74HCT2G00 datasheet PDF. This datasheet also covers the 74HC2G00 variant, as both devices belong to the same dual 2-input nand gate family and are provided as variant models within a single manufacturer datasheet.

General Description

The 74HC2G/HCT2G00 is a high-speed Si-gate CMOS device.

The 74HC2G/HCT2G00 provides the 2-input NAND function.

QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

Key Features

  • Wide supply voltage range from 2.0 to 6.0 V.
  • Symmetrical output impedance.
  • High noise immunity.
  • Low power dissipation.
  • Balanced propagation delays.
  • Very small 8 pins package.
  • Output capability is standard.
  • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (74HC2G00_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
74HCT2G00 Dual 2-input NAND gate nexperia
74HCT2G00-Q100 Dual 2-input NAND gate nexperia
74HCT2G00DC Dual 2-input NAND gate nexperia
74HCT2G00DP Dual 2-input NAND gate nexperia
74HCT2G02 Dual 2-input NOR gate nexperia

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
74HCT2G08 Dual 2-input AND gate
74HCT2G126 Dual buffer/line driver
74HCT2G32 Dual 2-input OR gate
74HCT20 Dual 4-input NAND gate
74HCT21 Dual 4-input AND gate

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DATA SHEET 74HC2G00; 74HCT2G00 Dual 2-input NAND gate Product specification Supersedes data of 2002 Jul 10 2003 Feb 12 Philips Semiconductors Dual 2-input NAND gate Product specification 74HC2G00; 74HCT2G00 FEATURES • Wide supply voltage range from 2.0 to 6.0 V • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • Very small 8 pins package • Output capability is standard • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. DESCRIPTION The 74HC2G/HCT2G00 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G00 provides the 2-input NAND function. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.