Philips 74HCT2G08
The 74HC2G/HCT2G08 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G08 provides the 2-input AND function.| Part No. | 74HCT2G08 |
|---|---|
| Datasheet | 74HCT2G08 Download |
| Manufacturer |  Philips |
| Description | Dual 2-input AND gate |
| Buy | Stock & Price |
FEATURES
● Wide supply voltage range from 2.0 to 6.0 V● Symmetrical output impedance
● High noise immunity
● Low power dissipation
● Balanced propagation delays
● Very small 8 pins package
● Output capability is standard
● ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
● Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
DESCRIPTION
74HC2G08; 74HCT2G08 TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For 74HC2G08 the condition is VI = GND to VCC. For 74HCT2G08 the condition is VI = GND to VCC − 1.5 V. PARAMETER propagation delay nA, nB to nY input capacitance power dissipation...
