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BAS70 - Schottky barrier (double) diodes

General Description

1 a1 2 n.c.

a1 k2 k1, a2 a1 a2 k1, k2 k1 k2 a1, a2 k1 k2 a2 a1 DESCRIPTION Planar Schottky barrier diodes with an integrate

Key Features

  • Low forward current.
  • High breakdown voltage.
  • Guard ring protected.
  • Small plastic SMD package.
  • Low diode capacitance.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BAS70-04W Schottky barrier (double) diodes
BAS70-05W Schottky barrier (double) diodes
BAS70-06W Schottky barrier (double) diodes
BAS70W Schottky barrier (double) diodes
BAS16L High-speed diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS70 series Schottky barrier (double) diodes Product specification Supersedes data of 1996 Oct 01 1999 Jun 01 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70 series FEATURES • Low forward current • High breakdown voltage • Guard ring protected • Small plastic SMD package • Low diode capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits. PINNING DESCRIPTION PIN SOT23 SOT143B BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07 (see Fig.1b) (see Fig.1c) (see Fig.1d) (see Fig.1e) (see Fig.2) 1 a1 2 n.c.