Philips BC109
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 100 mA)● Low voltage (max. 45 V).
APPLICATIONS
● General purpose switching and amplification.DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 3 BC107; BC108; BC109 PINNING PIN 1 2 3 emitter base collector, connected to the caseDESCRIPTION
handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Ptot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 110 110 200 100 450 800 800 − MHz open base − − − − 45 20 200 300 V V mA mW open emitter − − 50 30 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).