Philips BC160
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● High current (max. 1 A)● Low voltage (max. 60 V).
APPLICATIONS
● General purpose applications.DESCRIPTION
PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and BC141. 3 1 handbook, halfpage 2 BC160; BC161 PINNING PIN 1 2 3 emitter base collector, connected to caseDESCRIPTION
3 2 1 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC160 BC161 VCES collector-emitter voltage BC160 BC161 ICM Ptot hFE peak collector current total power dissipation DC current gain BC160-10; BC161-10 BC160-16; BC161-16 fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz Tcase ≤ 45 °C IC = −100 mA; VCE = −1 V 63 100 50 100 160 − 160 250 − MHz open base − − − − − − − − −40 −60 −1.5 3.7 V V A W open emitter − − − − −40 −60 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 12 2 Philips Semiconductors Product specification PNP medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).