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BD826 - PNP power transistors

General Description

PNP power transistor in a TO-202; SOT128B plastic package.

NPN complements: BD825 and BD829.

Fig.1 Simplified outline (TO-202; SOT128B) and symbol.

Key Features

  • High current (max. 1 A).
  • Low voltage (max. 80 V).

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BD828 PNP power transistors
BD830 PNP power transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors PNP power transistors Product specification BD826; BD828; BD830 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN complements: BD825 and BD829. PINNING PIN 1 2 3 handbook, halfpage DESCRIPTION emitter collector, connected to metal part of mounting surface base 2 3 1 12 3 MAM304 Fig.1 Simplified outline (TO-202; SOT128B) and symbol.