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BFG424F - NPN 25 GHz wideband transistor

General Description

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Key Features

  • s Very high power gain s Low noise figure s High transition frequency s Emitter is thermal lead s Low feedback capacitance 1.3.

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BFG424F NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile CAUTION 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Very high power gain s Low noise figure s High transition frequency s Emitter is thermal lead s Low feedback capacitance 1.