BLC6G20LS-140 Datasheet | Philips Semiconductors

description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 35.5 Gp (d B) 16.5 ηD (%) 31 IMD3 (d Bc) - 37 [1] ACPR (d Bc) - 40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 m A: x Average output power = 35.5 W x Power gain = 16.5 d B (typ) x Efficiency = 31 % x IMD3 = - 37 d Bc x ACPR = - 40 d Bc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLC6G20-140 (SOT895-1) 1 3 2 2 3 sym112 BLC6G20LS-140 (SOT896-1) 1 2 3 drain gate source [1] 1 3 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLC6G20-140 BLC6G20LS-140 Description plastic flanged cavity package; 2 mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter...