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BLC6G20LS-140 - UHF power LDMOS transistor

Download the BLC6G20LS-140 datasheet PDF. This datasheet also covers the BLC6G20-140 variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Key Features

  • s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: x Average output power = 35.5 W x Power gain = 16.5 dB (typ) x Efficiency = 31 % x IMD3 =.
  • 37 dBc x ACPR =.
  • 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLC6G20-140_Philips.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BLC6G20-140 UHF power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 35.5 Gp (dB) 16.5 ηD (%) 31 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.