BLC6G20LS-140 - UHF power LDMOS transistor

This page provides the datasheet information for the BLC6G20LS-140, a member of the BLC6G20-140 UHF power LDMOS transistor family.

Product Overview

Philips

Part number	BLC6G20LS-140
Manufacturer	Philips
File Size	77.78 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G20LS-140 Datasheet
Additional preview pages of the BLC6G20LS-140 datasheet.

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: x Average output power = 35.5 W x Power gain = 16.5 dB (typ) x Efﬁciency = 31 % x IMD3 =.
37 dBc x ACPR =.
40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLC.

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Published: Nov 17, 2006 |