BLU30-12 Datasheet | Philips Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz munications band. FEATURES : - multi-base structure and emitter-ballasting resistors for an optimum temperature profile - gold metallization ensures excellent reliability - internal matching to achieve an optimum wideband capability and high power gain BLU30/12 The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature PIN CONFIGURATION PINNING PIN 1 handbook, halfpage SOT-119 class-B; c.w. VCE f PL GP ηC Th > > 12,5 V 470 MHz 30 W 6,0 d B 55 % 25 °C DESCRIPTION emitter emitter base collector emitter emitter 2 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. January 1985 2 http://.. Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation f > 1 MHz; Tmb = 25 °C Storage temperature Operating junction temperature Ptot (r.f.) Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max. BLU30/12 36 V 16,5 V 4 V 6 A 18 A 65 W 200 °C - 65 to + 150 °C handbook, halfpage MDA324 handbook, halfpage 100 Ptot MDA325 IC (A) Th = 70 °C Tmb = 25 °C (W) 80 60 1 40 II I 10-...