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BR103 - (BR100 / BR103) Silicon Bi-directional Trigger Device

General Description

Silicon bidirectional trigger device in a glass envelope suitable for surface mounting.

The device is intended for use in triac and thyristor trigger circuits.

SYMBOL V(BO) VO IFRM PARAMETER Breakover voltage Output voltage Repetitive peak forward current MIN.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BR100-13LLD Silicon Bi-directional Trigger Device

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www.DataSheet4U.com Philips Semiconductors Product Specification Silicon Bi-directional Trigger Device BR100/03 LLD GENERAL DESCRIPTION Silicon bidirectional trigger device in a glass envelope suitable for surface mounting. The device is intended for use in triac and thyristor trigger circuits. QUICK REFERENCE DATA SYMBOL V(BO) VO IFRM PARAMETER Breakover voltage Output voltage Repetitive peak forward current MIN. 28 7 MAX. 36 2 UNIT V V A OUTLINE - SOD80 SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL IFRM Ptot Tstg Tj PARAMETER Repetitive peak forward current Total power dissipation Storage temperature Operating junction temperature CONDITIONS t ≤ 10 µs, Ttp ≤ 50˚C; f = 60 Hz Ttp = 50˚C MIN. -55 MAX.