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BU2527A - Silicon Diffused Power Transistor

General Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.

Key Features

  • improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BU2530AL Silicon Diffused Power Transistor

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 125 5.0 2.0 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.