• Part: BU2530AL
  • Description: Silicon Diffused Power Transistor
  • Category: Transistor
  • Manufacturer: Philips Semiconductors
  • Size: 48.22 KB
Download BU2530AL Datasheet PDF
Philips Semiconductors
BU2530AL
BU2530AL is Silicon Diffused Power Transistor manufactured by Philips Semiconductors.
DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 k Hz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A TYP. 9 3.5 MAX. 1500 800 16 40 125 5.0 UNIT V V A A W V A µs PINNING - SOT430 PIN DESCRIPTION 1 base 2 collector 3 emitter heat collector sink PIN CONFIGURATION 1 23 SYMBOL c b e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC...