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BU2530AL Datasheet Silicon Diffused Power Transistor

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: Philips Semiconductors Silicon Diffused Power Transistor Product specification BU2530AL.

General Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 Tmb ≤ 25 ˚C IC = 9.0 A;

IB = 1.64 A ICsat = 9.0 A;

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