Datasheet4U Logo Datasheet4U.com

BUK9608-55A - transistor Logic level FET

Download the BUK9608-55A datasheet PDF. This datasheet also covers the BUK9508-55A variant, as both devices belong to the same transistor logic level fet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Key Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK9508-55A-Philips.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9608-55A (BUK9508-55A / BUK9608-55A) TrenchMOS logic level FET NXP
BUK9608-55A N-channel MOSFET nexperia
BUK9608-55 TrenchMOS transistor Logic level FET NXP
BUK9608-55 TrenchMOS transistor Logic level FET NXP
BUK9608-55B N-Channel MOSFET NXP Semiconductors

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BUK9508-55A transistor Logic level FET
BUK127-50GT PowerMOS transistor
BUK138-50DL Logic level TOPFET
BUK436-100A PowerMOS transistor
BUK436-100B PowerMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9508-55A BUK9608-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V V GS = 10 V MAX. 55 75 200 175 8 7.3 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain source ww re .nu at an e ce.