Philips LAE4002S
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | LAE4002S |
|---|---|
| Datasheet | LAE4002S Download |
| Manufacturer |  Philips |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Diffused emitter ballasting resistors● Self-aligned process entirely ion implanted and gold sandwich metallization
● Optimum temperature profile
● Excellent performance and reliability.
APPLICATIONS
Common emitter class A linear power amplifiers up to 4 GHz.DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits. 1 Marking code: R9. handbook, halfpage LAE4002S PINNING - SOT100 PIN 1 2 3 4 collector emitter base emitterDESCRIPTION
3 c 2 4 b e MAM312 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a common emitter class A circuit. MODE OF OPERATION CW linear amplifier f (GHz) 4 VCE (V) 18 IC (mA) 30 PL1 (mW) >126 Gpo (dB) >7.5 Zi (Ω) typ. 4 + j23 ZL (Ω) typ. 6.5 + j32 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15...
