Philips LCE2009S
The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Mar 03 2 Philips Semiconductors Product specification NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).| Part No. | LCE2009S |
|---|---|
| Datasheet | LCE2009S Download |
| Manufacturer |  Philips |
| Description | NPN microwave power transistors |
| Buy | Stock & Price |
FEATURES
● Diffused emitter ballasting resistors● Self-aligned process entirely ion implanted and gold metallization
● Optimum temperature profile
● Excellent performance and reliability.
APPLICATIONS
● Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4DESCRIPTION
LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package. PINNINGDESCRIPTION
collector emitter base emitter handbook, halfpage 4 handbook, halfpage 4 c 3 1 3 c b e 2 Top view Marking code: LCE2009S = 408. MAM330 b e 2 1 Top view MAM329 Marking code: LBE2003S = 407; LBE2009S = 409. Fig.1 Simplified outline and symbol (SOT441A). Fig.2 Simplified outline and symbol (SOT442A). QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. TYPE NUMBER LBE2003S LBE2009S LCE2009S MODE OF OPERATION Class-A (CW) linear Class-A (CW) linear f (GHz) 2 2 VCE (V) 18 18 IC (mA) 30...
