Philips MMBTA92
This data sheet contains the design target or goal specifications for product development. This data sheet contains preliminary data, and supplementary data will be published at a later date.| Part No. | MMBTA92 |
|---|---|
| Datasheet | MMBTA92 Download |
| Manufacturer |  Philips |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 100 mA)● High voltage (max. 300 V).
APPLICATIONS
● Telephony● Professional communication equipment.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package. NPN complement: MMBTA42. MARKING TYPE NUMBER MMBTA92 Note 1. ∗ = p: made in Hong Kong. ∗ = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MARKING CODE(1) 7E∗ Top view handbook, halfpage MMBTA92 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol.
