Philips MPSA14
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | MPSA14 |
|---|---|
| Datasheet | MPSA14 Download |
| Manufacturer |  Philips |
| Description | NPN Darlington transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 30 V)
● High DC current gain (min. 10000).
APPLICATIONS
● High gain amplification. handbook, halfpage MPSA14 PINNING PIN 1 2 3 collector base emitterDESCRIPTION
2 1DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA64. 1 2 3 TR1 TR2 MAM252 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. 30 30 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN Darlington transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
