Philips MX1011B200Y
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.| Part No. | MX1011B200Y |
|---|---|
| Datasheet | MX1011B200Y Download |
| Manufacturer |  Philips |
| Description | Microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor● Diffused emitter ballasting resistors improve ruggedness
● Interdigitated emitter-base structure provides high emitter efficiency
● Gold metallization with barrier realizes very stable characteristics and excellent lifetime
● Multicell geometry improves power sharing reduces thermal resistance
● Internal input and output prematching networks allow an easier design of circuits. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION CONDITIONS f VCC PL Gp (GHz) (V) (W) (dB) Class C tp = 10 µs; δ = 1% 1.09 50 200 ≥7.5 PINNING - SOT439A PIN
DESCRIPTION
1 collector 2 emitter 3 base connected to flange ηC (%) ≥45APPLICATIONS
Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty opera...
